Analysis on O3 Sensing and Conducting Property of Sn doped In2O3 using Hydrothermal Preparation Method
Volume
2, No.3
Pages:
371-375
Year of Publication:
October,2016
Journal of Applied Science and Engineering Methodologies
ISSN:
2347-8586
| Citation: E.Nirmala, I. Kartharinal Punithavathy, S.Johnson Jeyakumar."Analysis on O3 sensing and conducting property of Sn doped In2O3 using hydrothermal preparation method" Journal of Applied Science and Engineering Methodologies,Vol.2,No.3(2016):371-375.
BibTex
@article{23371375, author = {E.Nirmala, I. Kartharinal Punithavathy, S.Johnson Jeyakumar}, title = {Analysis on O3 sensing and conducting property of Sn doped In2O3 using hydrothermal preparation method}, journal = {Journal of Applied Science and Engineering Methodologies}, volume = {2}, number = {3}, month = {Oct}, year = {2016}, issn = {2395–5341}, url = {http://www.jasem.in/2016/23371375.html}, publisher = {Scientist Link Group of Publications}, address = {Chennai, India} } |
| DOI: | Full Text Download |
Abstract:
The In2O3 nano material is prepared by hydrothermal method and is doped with Sn by 5, 10, 15 and 20 mol. concentration. The elevated property is studied keenly. All doped samples are characterized suing proportionate technical tools. The distortion of fundamental lattice pattern of In2O3 due to the Sn doping is identified. The lattice pattern is slowly changed from simple cubic to tetragonal form. The modified property of the compound at 20 mol. of Sn is elaborately studied. The O3 sensing characteristic mechanism is explored which is very high at 20 mol. of Sn doping.
Keywords: nano material,hydrothermal method,indium oxide
The In2O3 nano material is prepared by hydrothermal method and is doped with Sn by 5, 10, 15 and 20 mol. concentration. The elevated property is studied keenly. All doped samples are characterized suing proportionate technical tools. The distortion of fundamental lattice pattern of In2O3 due to the Sn doping is identified. The lattice pattern is slowly changed from simple cubic to tetragonal form. The modified property of the compound at 20 mol. of Sn is elaborately studied. The O3 sensing characteristic mechanism is explored which is very high at 20 mol. of Sn doping.
Keywords: nano material,hydrothermal method,indium oxide
References:
- D.S. Ginley, C. Bright, Transparent conducting oxides, MRS Bull. 25 (2000) 15–21.
- T. Minami, Transparent conducting oxide semiconductors for transparent electrodes, Semicond. Sci. Technol. 20 (2005) 35–44.
- Hafeezullah, Zain H. Yamani, Javed Iqbal, Ahsanulhaq Qurashi, Abbas Hakeem, Journal of Alloys and Compounds 616 (2014) 76–80.
- Vishwakarma S.R., Rahmatullah and H.C. Prasad, J. Physics D.,26, (1993) 959-962.
- Lalauze R., J.C.LeThiesse, C. Pijolat and M. Soustelle, J. Solid State Ionics, 12, (1987) 453-457.
- Rumyantseva, M.N., A.M. Gaskov, N. Rosman and T. Pagnier, J.Chemistry of Materials, 17, (2005) 893.
- Niranjan, R.S., Y.K. Hwang, D.K. Kim, S.H. Jhung, J.S. Chang and I.S. Mulla, J.Materials Chemistry and Physics, (2005) 92, 384.
- Kamalpreet K., A. Mahajan and R.K. Bedi, Journal of Applied Surface Science, 257, (2011) 2929-2934.
- Carrie Donley, Darren Dunphy, David Paine, Chet Carter, Ken Nebesny, Paul Lee, Dana Allowayand Neal R. Armstrong, Langmuir (2002) 18, 450-457.
- Bon-Ryul Koo and Hyo-Jin Ahn, Journal of Nanoscience and Nanotechnology, (2014) 14, 9632–9636.
- A. Ayeshamariam, M.Kashif, M.Bououdina, U.Hashim, M.Jayachandran, M.E.Alif, Ceramics International 40 (2014) 1321–1328.
- Sofia Elouali, Leanne G. Bloor, Russell Binions, Ivan P. Parkin, Claire J. Carmalt,and Jawwad A. Darr, American Chemical Society, Langmuir 2012, 28, 1879−1885.
- H. R. Fallah, et al., "The effect of deposition rate on electrical, optical and structural properties of tin-doped indium oxide (ITO) films on glass at low substrate temperature," Physica B: Condensed Matter, vol. 373, pp. 274-279, 2006.